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Grow of Zinc telluride ZnTe Crystal in Microngravity on Tiangong-2 Spaceship

2019-03-04
At present, the main methods of crystal growth of zinc Zinc telluride are liquid encapsulation, gas phase, melt and flux (including zinc and tellurium fluxes). The equipment of liquid encapsulation is expensive, the synthesis and growth of materials need to be carried out under high temperature and pressure, so the cost is high. Tellurium fluxes grow slowly, but the cost is high. According to the phase diagram, the melting point of VI semiconductors grown by tellurium flux method can be effectively reduced, and the tellurium flux method itself has the purification effect, which can remove impurities in the material during the growth process, thus improving the electrical parameters of the material. However, the preparation of semiconductor materials on the ground has some technical difficulties, especially the gravitational segregation and buoyancy convection, which have a very prominent impact on the crystal properties, especially the composition uniformity. The microgravity environment in space can provide an effective way to solve these problems. In recent years, microgravity has been carried out under microgravity. Studies on the growth of n V semiconductors to overcome the unavoidable gravity and convection effects on the ground. Under space microgravity, natural convection disappears and the growth process of crystals is controlled by diffusion, which is very beneficial to improving the quality of crystals.
 
We report very sharp bound exciton luminescence spectra in excessive high-quality soften-grown very gently compensated ZnTe, p-type with NA-ND within the low 10+15 cm-3. bound exciton localisation energies at seven shallow impartial acceptors with EA among ~55 and ~one hundred fifty meV are very insensitive to EA. Optical absorption and dye laser luminescence excitation spectroscopy were necessary to reap a full separation of the transitions because of distinct acceptors, collectively with a have a look at of positive ‘-hole’ luminescence satellites wherein the acceptor is left in a series of orbital states after bound exciton decay. two shallow acceptors are PTe and AsTe, a 3rd probably LiZn whilst a fourth, tremendously prominent in our first-class undoped crystals, may be a complicated. A deeper, one hundred fifty meV acceptor, regularly stated inside the ZnTe literature and electrically dominant in most of our undoped crystals has the Zeeman individual of a factor illness. We gift clear evidence from our spectra that this power does not represent the binding of a single hole at a doubly ionized cation vacancy, a famous attribution in view that 1963. This acceptor may be blanketed by using every other impurity, probably CuZn. We also document certain phonon outcomes, lifetime broadening of excited certain exciton states and examine a unmarried unidentified donor with ED ~18.five meV. This power is determined the usage of selective dye laser excitation on the susceptible impartial donor bound exciton line and from the onset of valence band to ionized donor image-absorption.